MEMS Pressure Dies
The piezoresistive lnsenso Pressure sense Dies (IPD) are designed and specialized for a wide range of applications. Through 5 product lines the design, material and production process are optimized for their multiple target applications.
This ranges from high precision application with an excellent long-term stability, to highly robust application through cost efficient mobility application and strain gage dies.
DESIGN AND PROCESS IP FOR SEMICONDUCTOR PROCESS
• Layer deposition
• Implantation
• Annealing/Diffusion
• Metallization
• Sensor design
• Test structures
MEMS PROCESS
• Membrane etch
• Anodic bonding or silicon direct bonding
• Dicing
IPD 10
High precision technology
Bridge Resistance: 6.3 kO
TCR 0.09 %/K
TCS -0.20 %FSS/K
• High long-term stability
• Low power consumption
• Silicon constraint option
for differential pressure
application
Layout
Backplate options
IPD 25
Strain Gauge Technology
Pressure Range: Customer specific
Bridge Resistance: 5.5 kO *
TCR 0.28 %/K
TCS -0.20 %FSS/K
* Bridge resistance measured on wafer level. alter
packaging the stress may influence bridge
resistance value.
classic strain gauges
• Advantages compared to
competitors due to implanted
resistors. electrical shielding
and secondary passivation
Layout
Cross section
IPD 35
Mobility Technology
Bridge Resistance: 5.5 kO
TCR 0.31 %/K
TCS -0.20 %FSS/K
applications
• Secondary passivation
• Designed for up to 150°C
Layout
Backplate options
IPD 4X
High Robust Technology
IPD40
Pressure Range: 100 mbar-600 bar
Bridge Resistance: 5.5 kO
TCR 0.31 %/K
TCS -0.20 %FSS/K
IPD41
Pressure Range: 100 mbar-600 bar
Bridge Resistance: 3.6 kO
TCR 0.24%/K
TCS -0.20 %FSS/K
IPD42
Pressure Range: 100 mbar-600 bar
Bridge Resistance: 3.6 kO
TCR 0.31 %/K
TCS -0.20 %FSS/K
• Designed for robustness
• Simplified passive
compensation due to more
linear TCS (at constant
current mode)
• Different glass constraint
thicknesses for adaptation
of packaging requirement
Layout
Backplate options
IPD 53
Absolute Pressure Sensor
Pressure Range: 6 bar
Bridge Resistance: 4.7 kO
TCR 0.26 %/K
TCS -0.19 %FSS/K
• Secondary passivation for
• High reliability
• Low pressure hysteresis
• Fast response
• High impedance bridge
• Pressure proportional
output signal
• Very cost efficient through
smallest size
Layout
Cross section
Insenso: Providing Certainty
Contact
Insenso GmbH
Rudower Chaussee 29
12489 Berlin
Germany
tel: +49 (0) 176 16164900
mail: info@insenso.de